2SK3878
- Brand New and Original.
- Fast Delivery and Low MOQ.
- 90 Days Guarantee for Money Back.
- One Stop Electronic Components Service.
- PCB & PCB Assembly.
- 7/24 Hours Service and Worldwide Shipping
Email: Sales@tf-elec.com ( Datasheet and Price)
- New and Original 100%
- 90 Days Money Refund
- 70000+ Various Stocks
- Fast Delivery within 3-5 days.
Description
| Part Number | MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 720V Toshiba 2SK3878 |
| Price | Sales@tf-elec.com |
| Manufacturer: | Toshiba |
| Product Category: | MOSFETs |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-3PN-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 900 V |
| Id – Continuous Drain Current: | 9 A |
| Rds On – Drain-Source Resistance: | 1 Ohms |
| Vgs – Gate-Source Voltage: | – 30 V, + 30 V |
| Qg – Gate Charge: | 60 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 150 W |
| Packaging: | Tube |
| Configuration: | Single |
| Fall Time: | 20 ns |
| Forward Transconductance – Min: | 7 S |
| Height: | 20 mm |
| Length: | 15.5 mm |
| Product Type: | MOSFETs |
| Rise Time: | 25 ns |
| Subcategory: | Transistors |
| Transistor Type: | 1 N-Channel |
| Width: | 4.5 mm |
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